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LW10-797619
X band 200 W GaN Based Solid State Power Amplifier
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The Amplifier is designed for X band pulsed power applications with up to 80% duty cycle. The amplifier uses high performance Gallium Nitride (GaN) power transistors to achieve high output power combined with a respectable efficiency at X-band. The amplifier provides excellent thermal stability through the use of a high thermal conductivity carrier. The product is ideally suited for high power ATC and surveillance radar, general purpose high power output stages.
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Specifications & Resources for LW10-797619
Ideal application and market usage
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Ideal markets
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Telecommunications
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Space & Science
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Telecommunications
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Ideal applications
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- Radar
- Design Features
- - 8.7 to 9.3 GHz Operating band. - 52 dBm min. Peak Pulsed Power. - 28 V Operation. - Compact, conduction cooled. - 100 W and 50 W variants available.
- RF Output Frequency
- 8.7 GHz - 9.3 GHz
- Output Power (P sat)
- 53 dBm
- Small Signal Gain
- 65 dB typ
- Power Supply
- 28V, 52A at P sat
- Output Load VSWR
- 02:01
- Input RF Drive
- "<-10 dBm"
- Voltage Ripple (Pk-Pk
- 1V
- Pulse Width (for nominal 20% duty cycle)
- 80 ?sec
- Pulse Width (80% duty cycle 5 seconds active every 1 minute)
- 400 μsec
- Duty Cycle (nominal operating)
- 20%
- Duty Cycle (80% duty cycle 5 seconds active every 1 minute)
- -70 dBm
- Baseplate Temperature Monitor
- 10 mV/˚C
- Current Monitor
- 50 mV/A
- Dimensions (mm)
- 199 x 134 x 37.5
